EAG Application Solutions for Dopants

Dopants are elements deliberately added to semiconductor materials to give them the desired electrical characteristics. Concentrations are typically in the low at% range down to parts per million (ppm). Dopant concentration and distribution are key characteristics in determining electrical performance.

Implant Dose

Secondary Ion Mass Spectrometry (SIMS) and Low Energy X-ray Emission Spectrometry (LEXES) can be used to accurately determine implant dose, and precisely compare doses between wafers. LEXES can also be used to map the implanted dose across entire 200mm and 300mm wafers.

Implant Profiles

You can use Secondary Ion Mass Spectrometry (SIMS) can be used to characterize the profile shape of ion implants and contaminants. If the dopant is electrically active, then Spreading Resistance Profiling (SRP) can be used..

ULE Profiles

Low Energy X-ray Emission Spectrometry (LEXES), Secondary Ion Mass Spectrometry (SIMS) and X-ray Photoelectron Spectroscopy (XPS) can be used to quantify the dopant concentration in high-dose shallow implants.

Layers

Secondard Ion Mass Spectrometry (SIMS) can be used to profile the concentration of dopants vs. depth in silicon layers and compound semiconductors.

Two-Dimensional Profiles

Scanning Capacitance Microscopy (SCM) can be used to characterize electrically active dopants for distribution in two-dimensional space using SCM (either laterally in the XY plane or in the Z plane on cross sections).

Application Notes